CuInSe2 precursor films electro-deposited directly onto MoSe2
Identifieur interne : 004523 ( Main/Repository ); précédent : 004522; suivant : 004524CuInSe2 precursor films electro-deposited directly onto MoSe2
Auteurs : RBID : Pascal:10-0414811Descripteurs français
- Pascal (Inist)
- Précurseur, Cellule solaire, Molybdène Séléniure, Dépôt électrolytique, Electrode couche mince, Semiconducteur, Indium alliage, Cuivre alliage, Alliage binaire, Composé binaire, Cuivre II Sulfate, Indium III Chlorure, Molybdène, Microscopie électronique balayage, Courant photoélectrique, Indium Séléniure, Cuivre Séléniure, Réaction électrochimique, Structure surface, Morphologie, CuInSe2.
- Wicri :
- concept : Molybdène.
English descriptors
- KwdEn :
- Binary alloy, Binary compound, Copper II Sulfates, Copper Selenides, Copper alloy, Electrochemical reaction, Electrodeposition, Indium III Chlorides, Indium Selenides, Indium alloy, Molybdenum, Molybdenum Selenides, Morphology, Photoelectric current, Precursor, Scanning electron microscopy, Semiconductor materials, Solar cell, Surface structure, Thin layer electrode.
Abstract
Mo/MoSe2 thin film electrodes formed by selenisation of molybdenum are investigated as chemically robust substrates for the electro-deposition of InCu precursor layers for CuInSe2 (ClSe) solar cell absorber films. Exposure of molybdenum films to selenium vapour at 550 °C produces thin and chemically robust heterostructures of Mo/MoSe2. These films exhibit the characteristics of a degenerate semi-conductor and provide close to metallic electrical conductivity for electro-deposition processes in both acidic and alkaline aqueous media. The Mo/MoSe2 films are characterised by cyclic voltammetry for the reduction of Ru(NH3)36 in aqueous 0.1 M KCl, for the reduction of 0.1 M In3+ in aqueous 0.5 M LiCl pH 3, and for the reduction of 0.1 M Cu2+ in aqueous 3 M NaOH with 0.2 M D-sorbitol. In all three cases well-defined and reversible voltammetric responses are observed. For the formation of ClSe films initially In3+ is deposited potentiostatically followed by electro-deposition of Cu2+ and selenisation at 550 °C in selenium vapour. Mechanically stable CISe films are produced and preliminary photo-electrochemical data demonstrate the effects of changing the stoichiometry.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">CuInSe<sub>2</sub> precursor films electro-deposited directly onto MoSe<sub>2</sub></title><author><name sortKey="Cummings, Charles Y" uniqKey="Cummings C">Charles Y. Cummings</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Bath, Claverton Down</s1><s2>Bath BA2 7AY</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Bath BA2 7AY</wicri:noRegion></affiliation></author><author><name sortKey="Zoppi, Guillaume" uniqKey="Zoppi G">Guillaume Zoppi</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Northumbria Photovoltaics Applications Centre, Northumbria University</s1><s2>NE1 8ST</s2><s3>GBR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>NE1 8ST</wicri:noRegion></affiliation></author><author><name sortKey="Forbes, Ian" uniqKey="Forbes I">Ian Forbes</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Northumbria Photovoltaics Applications Centre, Northumbria University</s1><s2>NE1 8ST</s2><s3>GBR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>NE1 8ST</wicri:noRegion></affiliation></author><author><name sortKey="Dale, Phillip J" uniqKey="Dale P">Phillip J. Dale</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratoire Photovoltaïque, Université du Luxembourg, Campus Limpertsberg, BS 1.1.7, 162a, avenue de la Faïencerie</s1><s2>1511</s2><s3>LUX</s3><sZ>4 aut.</sZ></inist:fA14><country>Luxembourg (pays)</country><wicri:noRegion>1511</wicri:noRegion></affiliation></author><author><name sortKey="Scragg, Jonathan J" uniqKey="Scragg J">Jonathan J. Scragg</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Bath, Claverton Down</s1><s2>Bath BA2 7AY</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Bath BA2 7AY</wicri:noRegion></affiliation></author><author><name sortKey="Peter, Laurie M" uniqKey="Peter L">Laurie M. Peter</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Bath, Claverton Down</s1><s2>Bath BA2 7AY</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Bath BA2 7AY</wicri:noRegion></affiliation></author><author><name sortKey="Kociok Kohn, Gabriele" uniqKey="Kociok Kohn G">Gabriele Kociok-Köhn</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Bath, Claverton Down</s1><s2>Bath BA2 7AY</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Bath BA2 7AY</wicri:noRegion></affiliation></author><author><name sortKey="Marken, Frank" uniqKey="Marken F">Frank Marken</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Bath, Claverton Down</s1><s2>Bath BA2 7AY</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Bath BA2 7AY</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0414811</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0414811 INIST</idno><idno type="RBID">Pascal:10-0414811</idno><idno type="wicri:Area/Main/Corpus">003E88</idno><idno type="wicri:Area/Main/Repository">004523</idno></publicationStmt><seriesStmt><idno type="ISSN">1572-6657</idno><title level="j" type="abbreviated">J. electroanal. chem. : (1992)</title><title level="j" type="main">Journal of electroanalytical chemistry : (1992)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary alloy</term><term>Binary compound</term><term>Copper II Sulfates</term><term>Copper Selenides</term><term>Copper alloy</term><term>Electrochemical reaction</term><term>Electrodeposition</term><term>Indium III Chlorides</term><term>Indium Selenides</term><term>Indium alloy</term><term>Molybdenum</term><term>Molybdenum Selenides</term><term>Morphology</term><term>Photoelectric current</term><term>Precursor</term><term>Scanning electron microscopy</term><term>Semiconductor materials</term><term>Solar cell</term><term>Surface structure</term><term>Thin layer electrode</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Précurseur</term><term>Cellule solaire</term><term>Molybdène Séléniure</term><term>Dépôt électrolytique</term><term>Electrode couche mince</term><term>Semiconducteur</term><term>Indium alliage</term><term>Cuivre alliage</term><term>Alliage binaire</term><term>Composé binaire</term><term>Cuivre II Sulfate</term><term>Indium III Chlorure</term><term>Molybdène</term><term>Microscopie électronique balayage</term><term>Courant photoélectrique</term><term>Indium Séléniure</term><term>Cuivre Séléniure</term><term>Réaction électrochimique</term><term>Structure surface</term><term>Morphologie</term><term>CuInSe2</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Molybdène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Mo/MoSe<sub>2</sub> thin film electrodes formed by selenisation of molybdenum are investigated as chemically robust substrates for the electro-deposition of InCu precursor layers for CuInSe<sub>2</sub> (ClSe) solar cell absorber films. Exposure of molybdenum films to selenium vapour at 550 °C produces thin and chemically robust heterostructures of Mo/MoSe<sub>2</sub>. These films exhibit the characteristics of a degenerate semi-conductor and provide close to metallic electrical conductivity for electro-deposition processes in both acidic and alkaline aqueous media. The Mo/MoSe<sub>2</sub> films are characterised by cyclic voltammetry for the reduction of Ru(NH<sub>3</sub>)<sup>3</sup><sub>6</sub> in aqueous 0.1 M KCl, for the reduction of 0.1 M In<sup>3+</sup> in aqueous 0.5 M LiCl pH 3, and for the reduction of 0.1 M Cu<sup>2+</sup> in aqueous 3 M NaOH with 0.2 M D-sorbitol. In all three cases well-defined and reversible voltammetric responses are observed. For the formation of ClSe films initially In<sup>3+</sup> is deposited potentiostatically followed by electro-deposition of Cu<sup>2+</sup> and selenisation at 550 °C in selenium vapour. Mechanically stable CISe films are produced and preliminary photo-electrochemical data demonstrate the effects of changing the stoichiometry.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1572-6657</s0></fA01><fA03 i2="1"><s0>J. electroanal. chem. : (1992)</s0></fA03><fA05><s2>645</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>CuInSe<sub>2</sub> precursor films electro-deposited directly onto MoSe<sub>2</sub></s1></fA08><fA11 i1="01" i2="1"><s1>CUMMINGS (Charles Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZOPPI (Guillaume)</s1></fA11><fA11 i1="03" i2="1"><s1>FORBES (Ian)</s1></fA11><fA11 i1="04" i2="1"><s1>DALE (Phillip J.)</s1></fA11><fA11 i1="05" i2="1"><s1>SCRAGG (Jonathan J.)</s1></fA11><fA11 i1="06" i2="1"><s1>PETER (Laurie M.)</s1></fA11><fA11 i1="07" i2="1"><s1>KOCIOK-KÖHN (Gabriele)</s1></fA11><fA11 i1="08" i2="1"><s1>MARKEN (Frank)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry, University of Bath, Claverton Down</s1><s2>Bath BA2 7AY</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Northumbria Photovoltaics Applications Centre, Northumbria University</s1><s2>NE1 8ST</s2><s3>GBR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Laboratoire Photovoltaïque, Université du Luxembourg, Campus Limpertsberg, BS 1.1.7, 162a, avenue de la Faïencerie</s1><s2>1511</s2><s3>LUX</s3><sZ>4 aut.</sZ></fA14><fA20><s1>16-21</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>1150</s2><s5>354000193073890030</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>30 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0414811</s0></fA47><fA60><s1>P</s1><s3>PR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of electroanalytical chemistry : (1992)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Mo/MoSe<sub>2</sub> thin film electrodes formed by selenisation of molybdenum are investigated as chemically robust substrates for the electro-deposition of InCu precursor layers for CuInSe<sub>2</sub> (ClSe) solar cell absorber films. Exposure of molybdenum films to selenium vapour at 550 °C produces thin and chemically robust heterostructures of Mo/MoSe<sub>2</sub>. These films exhibit the characteristics of a degenerate semi-conductor and provide close to metallic electrical conductivity for electro-deposition processes in both acidic and alkaline aqueous media. The Mo/MoSe<sub>2</sub> films are characterised by cyclic voltammetry for the reduction of Ru(NH<sub>3</sub>)<sup>3</sup><sub>6</sub> in aqueous 0.1 M KCl, for the reduction of 0.1 M In<sup>3+</sup> in aqueous 0.5 M LiCl pH 3, and for the reduction of 0.1 M Cu<sup>2+</sup> in aqueous 3 M NaOH with 0.2 M D-sorbitol. In all three cases well-defined and reversible voltammetric responses are observed. For the formation of ClSe films initially In<sup>3+</sup> is deposited potentiostatically followed by electro-deposition of Cu<sup>2+</sup> and selenisation at 550 °C in selenium vapour. Mechanically stable CISe films are produced and preliminary photo-electrochemical data demonstrate the effects of changing the stoichiometry.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001C01H04A</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Précurseur</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Precursor</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Precursor</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Solar cell</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Célula solar</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Molybdène Séléniure</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>05</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Molybdenum Selenides</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>05</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Molibdeno 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structure</s0><s5>35</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Estructura superficie</s0><s5>35</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Morphologie</s0><s5>36</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Morphology</s0><s5>36</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Morfología</s0><s5>36</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>76</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Métal transition</s0><s2>NC</s2><s5>53</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>Transition metal</s0><s2>NC</s2><s5>53</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Metal transición</s0><s2>NC</s2><s5>53</s5></fC07><fN21><s1>270</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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